TC6215 Datasheet | Microchip Technology

N-Channel and P-Channel Enhancement-Mode Dual MOSFETs Features - Back-to-Back, Gate-Source Zener Diodes - Guaranteed RDS(ON) at 4V Gate Drive - Low Threshold - Low On-resistance - Independent N-channel and P-channel - Electrically Isolated N-channel and P-channel - Low Input Capacitance - Fast Switching Speeds - Free from Secondary Breakdowns - Low Input and Output Leakage Applications - High-voltage Pulsers - Amplifiers - Buffers - Piezoelectric Transducer Drivers - General Purpose Line Drivers - Logic-level Interfaces General Description The TC6215 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in an 8-lead SOIC (TG) package. Both MOSFETs have integrated back-to-back gate-source Zener diode clamps and guaranteed RDS(ON) ratings down to 4V gate drive, allowing them to be driven directly with standard 5V CMOS logic. These low-threshold Enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This bination produces devices with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type See Table 3-1 for pin information. 8-lead SOIC (Top...