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M29W512GH7AN6E - Parallel NOR Flash Embedded Memory

Download the M29W512GH7AN6E datasheet PDF. This datasheet also covers the M29W512GH70N3E variant, as both devices belong to the same parallel nor flash embedded memory family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (M29W512GH70N3E-Micron.pdf) that lists specifications for multiple related part numbers.

Overview

512Mb: 3V Embedded Parallel NOR Flash.

Key Features

  • Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features.
  • Stacked device (two 256Mb die).
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • VPPH = 12V for fast program (optional).
  • Asynchronous random/page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25ns, 30ns.
  • Random access: 80ns, 90ns.
  • Commands sensitive to MSB A24 (die selectio.

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