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M29W512GH70N3E - Parallel NOR Flash Embedded Memory

Key Features

  • Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features.
  • Stacked device (two 256Mb die).
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • VPPH = 12V for fast program (optional).
  • Asynchronous random/page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25ns, 30ns.
  • Random access: 80ns, 90ns.
  • Commands sensitive to MSB A24 (die selectio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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512Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features • Stacked device (two 256Mb die) • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.