M29W512GH7AN6E Datasheet | Micron Technology

Features Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features - Stacked device (two 256Mb die) - Supply voltage - VCC = 2.7- 3.6V (program, erase, read) - VCCQ = 1.65- 3.6V (I/O buffers) - VPPH = 12V for fast program (optional) - Asynchronous random/page read - Page size: 8 words or 16 bytes - Page access: 25ns, 30ns - Random access: 80ns, 90ns - mands sensitive to MSB A24 (die selection) - Fast program mands: 32-word (64-byte) write buffer - Enhanced buffered program mands: 256-word - Program time - 16µs per byte/word TYP - Single die program time: 10s with VPPH, 16s with- out VPPH - Memory organization - Uniform blocks: 512 main blocks (2 x 256), 128KB or 64KW each - Program/erase controller - Embedded byte/word program algorithms - Program/erase suspend and resume capability - Read from any block during a PROGRAM SUSPEND operation - Read or program another block...