M29W512GH7AN6E Description
3V Embedded Parallel NOR Flash.
M29W512GH7AN6E Key Features
- Stacked device (two 256Mb die)
- Supply voltage
- VCC = 2.7-3.6V (program, erase, read)
- VCCQ = 1.65-3.6V (I/O buffers)
- VPPH = 12V for fast program (optional)
- Asynchronous random/page read
- Page size: 8 words or 16 bytes
- Page access: 25ns, 30ns
- Random access: 80ns, 90ns
- mands sensitive to MSB A24 (die selection)