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M29W512GH7AN6E - Parallel NOR Flash Embedded Memory

Download the M29W512GH7AN6E datasheet PDF. This datasheet also covers the M29W512GH70N3E variant, as both devices belong to the same parallel nor flash embedded memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features.
  • Stacked device (two 256Mb die).
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • VPPH = 12V for fast program (optional).
  • Asynchronous random/page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25ns, 30ns.
  • Random access: 80ns, 90ns.
  • Commands sensitive to MSB A24 (die selectio.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M29W512GH70N3E-Micron.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Micron Technology

Part Number Description
M29W512GH70N3E Parallel NOR Flash Embedded Memory
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M29W128GL Parallel NOR Flash Embedded Memory
M29W640FB Parallel NOR Flash Embedded Memory
M29W640FT Parallel NOR Flash Embedded Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
512Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features • Stacked device (two 256Mb die) • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.