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M29W512GH7AN6E

Manufacturer: Micron Technology

M29W512GH7AN6E datasheet by Micron Technology.

This datasheet includes multiple variants, all published together in a single manufacturer document.

M29W512GH7AN6E datasheet preview

M29W512GH7AN6E Datasheet Details

Part number	M29W512GH7AN6E
Datasheet	M29W512GH7AN6E M29W512GH70N3E Datasheet (PDF)
File Size	911.97 KB
Manufacturer	Micron Technology
Description	Parallel NOR Flash Embedded Memory

M29W512GH7AN6E Overview

3V Embedded Parallel NOR Flash.

M29W512GH7AN6E Key Features

Stacked device (two 256Mb die)
Supply voltage
VCC = 2.7-3.6V (program, erase, read)
VCCQ = 1.65-3.6V (I/O buffers)
VPPH = 12V for fast program (optional)
Asynchronous random/page read
Page size: 8 words or 16 bytes
Page access: 25ns, 30ns
Random access: 80ns, 90ns
mands sensitive to MSB A24 (die selection)

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