M58WR064KT
Key Features
- Supply voltage – VDD = 1.7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.7V to 2V for I/O buffers – VPP = 9V for fast program
- SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS BURST READ mode: 66 MHz – Asynchronous/synchronous page READ mode – Random access times: 70ns
- SYCHRONOUS BURST READ SUSPEND
- Programming time
- Memory blocks – Multiple bank memory array: 4Mb banks – Parameter blocks (top or bottom location)
- Dual operations – PROGRAM ERASE in one bank while read in others – No delay between read and write operations
- Block locking – All blocks locked at power-up – Any bination of blocks can be locked – WP# for block lock-dow
