MT45W4MW16BFB Datasheet | Micron Semiconductor

.. ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST Cellular RAM MEMORY BURST Cellular RAMTM Features - Single device supports asynchronous, page, and burst operations - VCC, VCCQ Voltages 1.70V- 1.95V VCC 1.70V- 2.25V VCCQ (Option W) - Random Access Time: 70ns - Burst Mode Write Access Continuous burst - Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (t CLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz - Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns - Low Power Consumption Asynchronous READ < 25m A Intrapage READ < 15m A Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 35m A Continuous burst READ < 15m A Standby: 90µA (32Mb), 100µA (64Mb) Deep power-down < 10µA - Low-Power Features Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Options - VCC Core Voltage Supply: 1.80V - MT45Wx Mx16BFB - VCCQ I/O Voltage 3.0V - MT45Wx ML16BFB 2.5V - MT45Wx MV16BFB 1.8V - MT45Wx MW16BFB - Timing 60ns access 70ns access 85ns access - Frequency 66 MHz 104 MHz Marking W (contact factory) (contact factory) W (contact factory) -70 -85 1 6 MT45W4MW16BFB MT45W2MW16BFB For the latest data sheet, please refer to Micron’s Web site: .micron./datasheets. Figure 1: Ball Assignment 54-Ball FBGA 1 A B C D E F G H...