Datasheet4U Logo Datasheet4U.com

MT45W4MW16BFB - (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory

This page provides the datasheet information for the MT45W4MW16BFB, a member of the MT45W2MW16BFB (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory family.

Description

, and Figure 40 on page 50 for 54-ball mechanical drawing.

Configuration: 4 Meg x 16 2 Meg x 16 Package 54-ball FBGA Operating Temperature Range Wireless (-25°C to +85°C) Industrial (-40°C to +85°C) NOTE: Marking MT45W4Mx16BFB MT45W2Mx16BFB FB WT IT

Features

  • Single device supports asynchronous, page, and burst operations.
  • VCC, VCCQ Voltages 1.70V.
  • 1.95V VCC 1.70V.
  • 2.25V VCCQ (Option W).
  • Random Access Time: 70ns.
  • Burst Mode Write Access Continuous burst.
  • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz.
  • Page Mode Read Access Sixteen-word page size Interpage r.

📥 Download Datasheet

Datasheet preview – MT45W4MW16BFB

Datasheet Details

Part number MT45W4MW16BFB
Manufacturer MicrON Semiconductor
File Size 792.67 KB
Description (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
Datasheet download datasheet MT45W4MW16BFB Datasheet
Additional preview pages of the MT45W4MW16BFB datasheet.

📁 Similar Datasheet

  • MT45W8MW16BGX - 8MEG X 16 Async/Page/Burst CellularRAM Memory (Micron Technology)
  • MT4505 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
  • MT4506 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
  • MT4507 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
  • MT4550 - 40V Power MOSFET (MT Semiconductor)
  • MT4599C - P & N-Channel 60-V(D-S) MOSFET (Matrix Microtech)
  • MT4067-P - 256K x 1 DRAM (Micron)
  • MT40A1G16 - 1.2V DDR4 SDRAM (Micron)
  • MT40A1G4 - DDR4 SDRAM (Micron)
  • MT40A1G8 - DDR4 SDRAM (Micron)
Other Datasheets by Micron Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst Mode Write Access Continuous burst • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.
Published: |