Datasheet Summary
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2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY
FLASH MEMORY
MT28F322D20 MT28F322D18
Low Voltage, Extended Temperature 0.18µm Process Technology
Features
- Flexible dual-bank architecture
- Support for true concurrent operation with zero latency
- Read bank a during program bank b and vice versa
- Read bank a during erase bank b and vice versa
- Basic configuration: Seventy-one erasable blocks
- Bank a (8Mb for data storage)
- Bank b (24Mb for program storage)
- VCC, VCCQ, VPP voltages
- 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only)
- 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V VCCQ (MAX) (MT28F322D20 only)
- 0.9V (TYP) VPP (in-system PROGRAM/ERASE)
- 12V ±5%...