Datasheet Summary
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PRELIMINARY‡
2 MEG x 16 ASYNC/PAGE FLASH MEMORY
FLASH MEMORY
Low Voltage, Extended Temperature
Features
- Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa
- Basic configuration: Seventy-one erasable blocks Bank a (8Mb for data storage) Bank b (24Mb for program storage)
- VCC, VCCQ, VPP voltages 2.7V (MIN), 3.3V (MAX) VCC 2.2V (MIN), 3.3V (MAX) VCCQ 3.0V (TYP) VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) VPP tolerant (factory programming patibility)
- Random access time: 70ns @ 2.7V VCC
- Page Mode read access Eight-word...