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PRELIMINARY‡
2 MEG x 16 ASYNC/PAGE FLASH MEMORY
FLASH MEMORY
MT28F322P3
Low Voltage, Extended Temperature
FEATURES
• Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa • Basic configuration: Seventy-one erasable blocks Bank a (8Mb for data storage) Bank b (24Mb for program storage) • VCC, VCCQ, VPP voltages 2.7V (MIN), 3.3V (MAX) VCC 2.2V (MIN), 3.3V (MAX) VCCQ 3.0V (TYP) VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) VPP tolerant (factory programming compatibility) • Random access time: 70ns @ 2.7V VCC • Page Mode read access Eight-word page Interpage read access: 70ns @ 2.7V Intrapage read access: 30ns @ 2.