MT41K256M4 - DDR3L SDRAM

Micron Technology

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Datasheet Details

Part number	MT41K256M4
Manufacturer	Micron Technology
File Size	2.72 MB
Description	DDR3L SDRAM
Datasheet	MT41K256M4_MicronTechnology.pdf

MT41K256M4 Product details

Description

DDR3L SDRAM MT41K256M4 32 Meg x 4 x 8 banks MT41K128M8 16 Meg x 8 x 8 banks MT41K64M16 8 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

Features

VDD = VDDQ = +1.35V (1.283V to 1.45V).
Backward compatible to VDD = VDDQ = 1.5V ±0.075V.
Differential bidirectional data strobe.
8n-bit prefetch architecture.
Differential clock inputs (CK, CK#).
8 internal banks.
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
Programmable CAS (READ) latency (CL).
Programmable CAS additive latency (AL).
Programmable CAS (WRITE) latency (CW.

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Published: Nov 5, 2017 |