MT41K256M8 - 1.35V DDR3L SDRAM

This page provides the datasheet information for the MT41K256M8, a member of the MT41K512M4 1.35V DDR3L SDRAM family.

Product Overview

Micron Technology

Part number	MT41K256M8
Manufacturer	Micron Technology
File Size	3.34 MB
Description	1.35V DDR3L SDRAM
Datasheet	MT41K256M8 Datasheet
Additional preview pages of the MT41K256M8 datasheet.

DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.

VDD = VDDQ = 1.35V (1.283.
1.45V).
Backward-compatible to VDD = VDDQ = 1.5V ±0.075V.
Differential bidirectional data strobe.
8n-bit prefetch architecture.
Differential clock inputs (CK, CK#).
8 internal banks.
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
Programmable CAS (READ) latency (CL).
Programmable posted CAS additive latency (AL).
Programmable CAS (WRITE) l.

Other Datasheets by Micron Technology

Published: Nov 5, 2017 |