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MT41K2G4 - TwinDie 1.35V DDR3L SDRAM

General Description

TwinDie™ 1.35V DDR3L SDRAM MT41K2G4 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8

The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses Micron’s 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM).

Key Features

  • Uses 4Gb Micron die.
  • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls).
  • Each rank has eight internal banks for concurrent operation.
  • VDD = V DDQ = 1.35V (1.283.
  • 1.45V); backward compatible to V DD = V DDQ = 1.5V ±0.075V.
  • 1.35V center-terminated push/pull I/O.
  • JEDEC-standard ball-out.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycl.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary‡ 8Gb: x4, x8 TwinDie DDR3L SDRAM Description TwinDie™ 1.35V DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Description The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses Micron’s 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM). Refer to Micron’s 4Gb DDR3 SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT41K1G4 correlate to TwinDie manufacturing part number MT41K2G4; specifications for base part number MT41K512M8 correlate to TwinDie manufacturing part number MT41K1G8. Options • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks • FBGA package (Pb-free) – 78-ball FBGA (10.5mm x 12mm x 1.2mm) Die Rev :D – 78-ball FBGA (9.