Datasheet Details
| Part number | MT41K256M4 |
|---|---|
| Manufacturer | Micron Technology |
| File Size | 2.72 MB |
| Description | DDR3L SDRAM |
| Datasheet |
 MT41K256M4 Datasheet
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General Description
DDR3L SDRAM
MT41K256M4
32 Meg x 4 x 8 banks MT41K128M8
16 Meg x 8 x 8 banks MT41K64M16
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.
Key Features
- VDD = VDDQ = +1.35V (1.283V to 1.45V).
- Backward compatible to VDD = VDDQ = 1.5V ±0.075V.
- Differential bidirectional data strobe.
- 8n-bit prefetch architecture.
- Differential clock inputs (CK, CK#).
- 8 internal banks.
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
- Programmable CAS (READ) latency (CL).
- Programmable CAS additive latency (AL).
- Programmable CAS (WRITE) latency (CW.