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MT41K256M4 Datasheet Ddr3l Sdram

Manufacturer: Micron Technology

Overview: 1Gb: x4, x8, x16 DDR3L SDRAM.

General Description

DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.

Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V patible mode.

Key Features

  • VDD = VDDQ = +1.35V (1.283V to 1.45V).
  • Backward compatible to VDD = VDDQ = 1.5V ±0.075V.
  • Differential bidirectional data strobe.
  • 8n-bit prefetch architecture.
  • Differential clock inputs (CK, CK#).
  • 8 internal banks.
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
  • Programmable CAS (READ) latency (CL).
  • Programmable CAS additive latency (AL).
  • Programmable CAS (WRITE) latency (CW.

More Datasheets from Micron Technology

Part Number Description
MT41K256M16 DDR3L SDRAM
MT41K256M8 1.35V DDR3L SDRAM
MT41K2G4 TwinDie 1.35V DDR3L SDRAM
MT41K128M16 1.35V DDR3L SDRAM
MT41K128M8 Automotive DDR3L SDRAM
MT41K1G16 1.35V DDR3L SDRAM
MT41K1G4 DDR3L SDRAM
MT41K1G8 TwinDie 1.35V DDR3L SDRAM
MT41K512M16 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
MT41K512M4 1.35V DDR3L SDRAM

MT41K256M4 Distributor