• Part: MT41K512M4
  • Description: 1.35V DDR3L SDRAM
  • Manufacturer: Micron Technology
  • Size: 3.34 MB
Download MT41K512M4 Datasheet PDF
MT41K512M4 page 2
Page 2
MT41K512M4 page 3
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MT41K512M4 Key Features

  • VDD = VDDQ = 1.35V (1.283-1.45V)
  • Backward-patible to VDD = VDDQ = 1.5V ±0.075V
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT)
  • Programmable CAS (READ) latency (CL)
  • Programmable posted CAS additive latency (AL)
  • Programmable CAS (WRITE) latency (CWL)