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MT45W8MW16BGX - 8MEG X 16 Async/Page/Burst CellularRAM Memory

Description

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Features

  • Single device supports asynchronous, page, and burst operations.
  • Vcc, VccQ Voltages 1.7V.
  • 1.95V Vcc 1.7V.
  • 1.95V VccQ.
  • Random Access Time: 70ns.
  • Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz.
  • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage.

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Datasheet Details

Part number MT45W8MW16BGX
Manufacturer Micron Technology
File Size 829.46 KB
Description 8MEG X 16 Async/Page/Burst CellularRAM Memory
Datasheet download datasheet MT45W8MW16BGX Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 Features • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ • Random Access Time: 70ns • Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.
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