MT45W8MW16BGX Datasheet - Micron Technology

8MEG X 16 Async/Page/Burst CellularRAM Memory

* Single device supports asynchronous, page, and burst operations

* Vcc, VccQ Voltages 1.7V

* 1.95V Vcc 1.7V

* 1.95V VccQ

* Random Access Time: 70ns

* Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX

MT45W8MW16BGX

Micron Technology

829.46 KB

8meg x 16 async/page/burst cellularram memory.

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