MT45W8MW16BGX Datasheet | Micron Technology

.. PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST Cellular RAM MEMORY 128Mb BURST Cellular RAMTM 1.5 Features - Single device supports asynchronous, page, and burst operations - Vcc, Vcc Q Voltages 1.7V- 1.95V Vcc 1.7V- 1.95V Vcc Q - Random Access Time: 70ns - Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (t CLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz - Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns - Low Power Consumption Asynchronous READ: < 30m A Intrapage Read: < 15m A Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 40m A Continuous burst READ: < 25m A Standby: < 40µA (TYP at 25 °C) Deep power-down: < 3µA (TYP) - Low-Power Features On-chip Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Options - Configuration: 8 Meg x 16 VCC Core Voltage Supply: 1.8V VCCQ I/O Voltage Supply: 1.8V - Package 54-ball VFBGA- ”green” - Timing 70ns access 85ns access Designator MT45W8MW16B Figure 1: Ball Assignment 54-Ball VFBGA 1 A B C D E F G H J LB# OE# A0 A1 A2 DQ8 UB# A3 A4 CE# DQ0 DQ9...