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MT47H16M16 - (MT47HxxMx) DDR2 SDRAM

Download the MT47H16M16 datasheet PDF. This datasheet also covers the MT47H64M4 variant, as both devices belong to the same (mt47hxxmx) ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 configuration DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Programmable CAS Latency (CL): 3 and 4 Posted CAS addi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT47H64M4_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT47H128M4 DDR2 SDRAM
MT47H128M8 DDR2 SDRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM Features • • • • • • • • • • • • • • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC standard 1.