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1N4150-1 - SWITCHING DIODE

Key Features

  • 1N4150-1.

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1N4150-1 FEATURES • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1uS: Surge Current B, sine 1S: Total Power Dissipation: Operating Current: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 4.0A 0.5A 500mW 200mA, TA= +25°C to +75°C 2mA/°C above TL (3/8”)= +75°C 50V DC ELECTRICAL CHARACTERISTICS VF IR Ambient IF (°C) mA Min Max Ambient Min Max Ambient V V (°C) V (dc) µA µA (°C) 25 1 .54 .62 25 50 - 0.1 25 25 10 .66 .74 150 50 - 100 25 50 .76 .86 25 100 .82 .92 25 200 .87 1.