1N4150-1
FEATURES
- 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/231
- SWITCHING DIODE
- METALLURGICALLY BONDED
- HERMETICALLY SEALED
- DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature: Storage Temperature: Surge Current A, sine 1u S: Surge Current B, sine 1S: Total Power Dissipation: Operating Current:
Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C -65°C to +175°C 4.0A 0.5A 500m W 200m A, TA= +25°C to +75°C
2m A/°C above TL (3/8”)= +75°C
50V
DC ELECTRICAL CHARACTERISTICS
Ambient IF
(°C) m A
Min Max Ambient
Min Max Ambient
V V (°C) V (dc) µA µA (°C)
1 .54 .62 25 50
- 0.1 25
25 10 .66 .74 150 50
- 100
25 50 .76 .86
25 100 .82 .92
25 200 .87 1.00
IR Min Max µA V V
10 75
- DESIGN DATA
Case: Hermetically sealed glass package per MILPRF-19500/231 DO-35 outline
Lead Material: Copper clad steel Lead Finish: Tin/Lead Thermal Resistance (RθJL): 250°C/W maximum at L=.375” Thermal Impedance (ZθJX): 70°C/W maximum...
