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  Microsemi Electronic Components Datasheet  

2N5686 Datasheet

NPN POWER SILICON TRANSISTOR

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
DEVICES
2N5685
2N5686
LEVELS
JAN
JANTX
JANTV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +25°C (1)
@ TC = +100°C (1)
Operating & Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
2N5685 2N5686
60 80
60 80
5.0 5.0
15 15
50 50
300 300
171 171
-55 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Max.
.0584
Note:
1. Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Unit
°C/W
Parameters / Test Conditions
OFF CHARACTERTICS (1)
Collector-Emitter Breakdown Voltage
IC = 100mAdc
Collector-Emitter Cutoff Current
VCE = 30Vdc
VCE = 40Vdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 1.5Vdc
VCE = 80Vdc, VBE = 1.5Vdc
Collector-Base Cutoff Current
VCE = 60Vdc
VCE = 80Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
Symbol Min. Max. Unit
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
V(BR)CEO
ICEO
ICEX
ICBO
IEBO
60 Vdc
80
500 μAdc
500
10
10
μAdc
2.0
2.0
mAdc
1.0 mAdc
TO-3 (TO-204AE)
T4-LDS-0162 Rev. 1 (100546)
Page 1 of 3


  Microsemi Electronic Components Datasheet  

2N5686 Datasheet

NPN POWER SILICON TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 5.0Adc, VCE = 2.0Vdc
IC = 25Adc, VCE = 2.0Vdc
IC = 50Adc, VCE = 5.0Vdc
Collector-Emitter Saturation Voltage
IC = 25Adc, IB = 2.5Adc
IC = 50Adc, IB = 10Adc
Base-Emitter Saturation Voltage
IC = 25Adc, IB = 2.5Adc
Base-Emitter Voltage
IC = 25Adc, VCE = 2.0Adc
Symbol
hFE
VCE(sat)
VBE(sat)
VBE(ON)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
IC = 5.0Adc, VCE = 10Vdc, f = 1.0MHz
Symbol
|hfe|
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 10Adc, VCE = 5.0Vdc, f = 1.0kHz
Output Capacitance
VCB = 10Vdc, IE = 0, 0.1MHz f 1.0MHz
hfe
Cobo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 30Vdc; IC = 25Adc; IB1 = 2.5Adc
Turn-Off Time
VCC = 30Vdc ; IC = 25Adc; IB1 = -IB2 = 2.5Adc
SAFE OPERATING AREA
Symbol
ton
toff
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 6.0Vdc, IC = 50Adc
Test 2
VCE = 30Vdc, IC = 10Adc
Test 3
VCE = 50Vdc, IC = 560mAdc
VCE = 60Vdc, IC = 640mAdc
2N5685
2N5686
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
Min.
30
15
5.0
Min.
2.0
15
Min.
Max.
Unit
60
1.0 Vdc
5.0
2.0 Vdc
2.0 Vdc
Max.
20
Unit
1200
Max.
1.5
3.0
pF
Unit
μs
μs
T4-LDS-0162 Rev. 1 (100546)
Page 2 of 3


Part Number 2N5686
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 3 Pages
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