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  Microsemi Electronic Components Datasheet  

2N5794U Datasheet

NPN SILICON DUAL TRANSISTOR

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /495
DEVICES
2N5793
2N5794
2N5794U 2N5794UC
LEVELS
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Symbol
VCEO
VCBO
VEBO
IC
PT
Value
40
75
6.0
600
One Total
Section 1 Device 2
0.5 0.6
Operating & Storage Junction Temperature Range Top, Tstg
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
NOTES:
1. Derate linearly 2.86 mW/°C for TA > +25°C
2. Derate linearly 3.43 mW/°C for TA > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
IC = 10mAdc
Symbol Min.
Max.
V(BR)CEO
40
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 50Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 4.0Vdc
ICBO
10
10
IEBO
10
10
Unit
Vdc
Adc
Adc
Adc
Adc
TO-78
6 PIN SURFACE MOUNT
T4-LDS-0213 Rev. 1 (111181)
Page 1 of 5


  Microsemi Electronic Components Datasheet  

2N5794U Datasheet

NPN SILICON DUAL TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 100Adc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
IC = 300mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 1.0Vdc
IC = 100Adc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
IC = 300mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 1.0Vdc
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 300mAdc, IB = 30mAdc
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 300mAdc, IB = 30mAdc
2N5793
2N5794, 2N5794U, 2N5794UC
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio, Magnitude
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 30Vdc, IC = 150mAdc, IB1 = 15mAdc, VBE(off) = 0.5Vdc
Turn-Off Time
VCC = 30Vdc, IC = 150mAdc, IB1 = IB2 =15mAdc
Symbol
hFE
hFE
VCE(sat)
VBE(sat)
Symbol
|hfe|
Cobo
Cibo
Symbol
ton
toff
Min.
20
25
35
40
25
20
35
50
75
100
40
50
0.6
Min.
2.0
Min.
Max.
Unit
120
300
0.3 Vdc
0.9
1.2 Vdc
1.8
Max.
10
8.0
33
Unit
pF
pF
Max.
45
310
Unit
s
s
T4-LDS-0213 Rev. 1 (111181)
Page 2 of 5


Part Number 2N5794U
Description NPN SILICON DUAL TRANSISTOR
Maker Microsemi
Total Page 5 Pages
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