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MM118-06F Datasheet, Microsemi

MM118-06F bridge equivalent, 3 phase n-channel insulated gate bipolar transistor igbt bridge.

MM118-06F Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 116.51KB)

MM118-06F Datasheet
MM118-06F
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 116.51KB)

MM118-06F Datasheet

Features and benefits


* Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
* Compact and rugged construction offering weight and space savings

Description

Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60.

Image gallery

MM118-06F Page 1 MM118-06F Page 2 MM118-06F Page 3

TAGS

MM118-06F
PHASE
N-CHANNEL
INSULATED
GATE
BIPOLAR
TRANSISTOR
IGBT
BRIDGE
Microsemi

Manufacturer


Microsemi (https://www.microsemi.com/)

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