MM118-06L bridge equivalent, 3 phase n-channel insulated gate bipolar transistor igbt bridge.
* Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
* Compact and rugged construction offering weight and space savings
Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60.
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