MRF553 Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Microsemi (now Microchip Technology)

MRF553 rf & microwave discrete low power transistors by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	MRF553
Manufacturer	Microsemi (now Microchip Technology)
File Size	229.55 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	MRF553 Datasheet

General Description

: Designed primarily for wideband large signal stages in the VHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Value 16 36 4.0 500 3.0 40 Unit Vdc Vdc Vdc mA Watts mW/ ºC MSC1316.PDF 10-25-99 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCEO BVCES BVCBO BVEBO ICES (on) HFE Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Colle

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER.

Key Features

Specified @ 12.5 V, 175 MHz Characteristics.
Output Power = 1.5 W.
Minimum Gain = 11.5 dB.
Efficiency 60% (Typ).
Cost Effective PowerMacro Package.
Electroless Tin Plated Leads for Improved Solderability MRF553 Power Macro.

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