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MRF553 - NPN SILICON RF LOW POWER TRANSISTOR

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF553/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF553 1.