Microsemi MRF553
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | MRF553 |
|---|---|
| Datasheet | MRF553 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Specified @ 12.5 V, 175 MHz Characteristics● Output Power = 1.5 W
● Minimum Gain = 11.5 dB
● Efficiency 60% (Typ)
● Cost Effective PowerMacro Package
● Electroless Tin Plated Leads for Improved Solderability MRF553 Power Macro
DESCRIPTION
: Designed primarily for wideband large signal stages in the VHF frequency range.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Value 16 36 4.0 500 3.0 40 Unit Vdc Vdc Vdc mA Watts mW/ ºC MSC1316.PDF 10-25-99ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCEO BVCES BVCBO BVEBO ICES (on) HFE Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Colle
