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MRF553 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed primarily for wideband large signal stages in the VHF frequency range.

Key Features

  • Specified @ 12.5 V, 175 MHz Characteristics.
  • Output Power = 1.5 W.
  • Minimum Gain = 11.5 dB.
  • Efficiency 60% (Typ).
  • Cost Effective PowerMacro Package.
  • Electroless Tin Plated Leads for Improved Solderability MRF553 Power Macro.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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MRF581AG RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF553 Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Value 16 36 4.0 500 3.0 40 Unit Vdc Vdc Vdc mA Watts mW/ ºC MSC1316.