MRF553 - NPN SILICON RF TRANSISTOR

ASI

General Description

The ASI MRF553 is designed for Low power amplifier applications.

Key Features

12.5 V, 175 MHz.
POUT = 1.5 W.
GP = 11.5 min.
η = 60 % (Typ).

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MRF553 npn silicon rf transistor by ASI - Datasheet Preview

Datasheet Details

Part number	MRF553
Manufacturer	ASI
File Size	15.07 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	MRF553 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCB 36 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.45 5.21 .175 .205 B 1.91 2.54 .075 .100 C 0.84 0.99 .033 .039 D 2.46 2.64 .097 .104 E 8.84 9.73 .348 .383 F 0.20 0.31 .008 0.12 G 7.24 8.13 .285 .320 H 1.65 0.65 J 3.25 0.128 K 0.64 1.02 .025 0.40 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCEO IC = 10 mA BVCBO IC = 5.0 mA BVCES IC = 5.0 mA BVEBO IE = 1.