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MRF553 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed primarily for wideband large signal stages in the VHF frequency range.

Key Features

  • Specified @ 12.5 V, 175 MHz Characteristics.
  • Output Power = 1.5 W.
  • Minimum Gain = 11.5 dB.
  • Efficiency 60% (Typ).
  • Cost Effective PowerMacro Package.
  • Electroless Tin Plated Leads for Improved Solderability Power Macro.

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Datasheet Details

Part number MRF553
Manufacturer Advanced Power Technology
File Size 139.60 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet MRF553 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553 MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Value 16 36 4.