MRF553

Manufacturer: Advanced Power Technology

MRF553 datasheet by Advanced Power Technology.

MRF553 Datasheet Details

Part number	MRF553
Datasheet	MRF553-AdvancedPowerTechnology.pdf
File Size	139.60 KB
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF553 Overview

Designed primarily for wideband large signal stages in the VHF frequency range. RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Value 16 36 4.0 500 3.0 40 Unit Vdc Vdc Vdc mA Watts mW/ ºC Advanced Power Technology reserves the right to change,...

MRF553 Key Features

Specified @ 12.5 V, 175 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11.5 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability

MRF553 from other manufacturers

View MRF553 datasheet index

Part Number	Description	Other Manufacturers
MRF553	NPN SILICON RF LOW POWER TRANSISTOR	Motorola
MRF553	NPN SILICON RF TRANSISTOR	ASI
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Microsemi

More Datasheets from Advanced Power Technology

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MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF517	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581	RF and Microwave Discrete Low Power Power Transistors
MRF5812	Bipolar Junction Transistor
MRF5812G	Bipolar Junction Transistor
MRF581A	RF and Microwave Discrete Low Power Power Transistors

MRF553 Datasheet Details

MRF553 Overview

MRF553 Key Features

MRF553 from other manufacturers

More Datasheets from Advanced Power Technology

MRF553 Distributor