2N3583 Datasheet | Microsemi

FEATURES : - - - High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts - - High Current: 2 Amps Low VCE (SAT) 5 Amp, 250V, High Voltage NPN Silicon Power Transistors DESCRIPTION : These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in mercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-66 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCBO- VCEO- VCER- VEBO- IC- IC- IB- TSTG- TJ- - PT- θ - CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage RBE = 50Ω Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from Case for 10 Sec. Power Dissipation TC = 25° C Thermal Impedance VALUE 250 175 250 6 5 1 1 -65 to 200 -65 to 200 235 35 5.0 UNITS Volts Volts Volts Volts Amps Amps Amps °C °C °C Watts ° C/W Indicates JEDEC registered data. MSC1055.PDF 05-19-99 ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)- VCER(sus) ICEV- ICEV- ICEO- IEB0- h FE- CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current TC = 150° C Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio (Note 1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (Note 1) Second-Breakdown Collector...