| Part number | 2N3583 |
|---|---|
| Datasheet | 2N3583_MicrosemiCorporation.pdf |
| File Size | 63.42 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | 5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors |
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These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in mercial, Industrial, and Military power switching, amplifier, and regulator applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N3583 | Silicon NPN Transistors | NTE |
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2N3583 | SILICON NPN TRANSISTORS | Central Semiconductor |
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2N3583 | NPN SILICON POWER TRANSISTORS | Comset Semiconductor |
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2N3583 | Bipolar NPN Device | Seme LAB |
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2N3583 | Silicon NPN Power Transistor | Inchange Semiconductor |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N3584 | 5 Amp/ 375V/ High Voltage NPN Silicon Power Transistors |
| 2N3585 | 5 Amp/ 500V/ High Voltage NPN Silicon Power Transistors |
| 2N3501UB | NPN Transistor |
| 2N3027 | SCRs |
| 2N3028 | SCRs |
| 2N3029 | SCRs |
| 2N3030 | SCRs |
| 2N3031 | SCRs |
| 2N3032 | SCRs |
| 2N3055 | NPN POWER SILICON TRANSISTOR |
