2N3583 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 .
Contunuous Collector Current-IC= 1A. Power Dissipation-PD=35W @TC= 25℃. Collector-Emitter Saturation Voltage: VCE(sat)= 5.

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Datasheet Specifications

Part number: 2N3583
Manufacturer: Inchange Semiconductor
File Size: 227.61 KB
Datasheet: 2N3583_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Colle

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2N3583 Silicon NPN Power Transistor Inchange Semiconductor

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