Datasheet Details
- Part number
- 2N3055H
- Manufacturer
- Inchange Semiconductor
- File Size
- 31.70 KB
- Datasheet
- 2N3055H-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
2N3055H Description
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H .
Excellent Safe Operating Area.
DC Current Gain-hFE=20-70@IC = 4A.
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
2N3055H Applications
* Designed for general-purpose switching and amplifier
Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCER
Collector-Emitter Voltage
70 V
VCEO Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector C
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