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2N3055H

Silicon NPN Power Transistor

2N3055H General Description


*Excellent Safe Operating Area
*DC Current Gain-hFE=20-70@IC = 4A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS
*Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT.

2N3055H Datasheet (31.70 KB)

Preview of 2N3055H PDF

Datasheet Details

Part number:

2N3055H

Manufacturer:

Inchange Semiconductor

File Size:

31.70 KB

Description:

Silicon npn power transistor.

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2N3055H Silicon NPN Power Transistor Inchange Semiconductor

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