2N3055H Datasheet - Inchange Semiconductor

Datasheet Details

Part number:

2N3055H

Manufacturer:

Inchange Semiconductor

File Size:

31.70 KB

Description:

Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H DESCRIPTION *Excellent Safe Operating Area *DC Current Gain-hFE=20-70@IC = 4A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS *Designed for general-purpose

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2N3055H, Silicon NPN Power Transistor

*Excellent Safe Operating Area *DC Current Gain-hFE=20-70@IC = 4A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS *Designed for general-purpose switching and amplifier Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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2N3055H Silicon NPN Power Transistor Inchange Semiconductor

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