2N3019 Datasheet - Inchange Semiconductor

2N3019 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 1A PC Collector Power Dissipation@TC=25℃ 5 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Rth j-c Thermal Resistance,Junction to Ambient Thermal Resistanc.

2N3019-InchangeSemiconductor.pdf