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2N3767 - NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 60 80 6.0 2.0 4.0 25 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 7.0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W TO-66* (TO-213AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max.