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  Microsemi Electronic Components Datasheet  

2N3767 Datasheet

NPN POWER SILICON TRANSISTOR

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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3766
2N3767
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3766 2N3767
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
60 80
80 100
6.0
2.0
4.0
25
-65 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case RθJC 7.0
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N3766
2N3767
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
Collector-Emitter Cutoff Current
2N3766
2N3767
ICEO
VCE = 80 Vdc, VBE = 1.5 Vdc
VCE = 100 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
2N3766
2N3767
ICEX
VCB = 80 Vdc
VCB = 100 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
2N3766
2N3767
ICBO
IEBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
Min.
60
80
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
500 µAdc
500
10 µAdc
10
10 µAdc
10
500 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3767 Datasheet

NPN POWER SILICON TRANSISTOR

No Preview Available !

2N3766, 2N3767 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 500 mAdc, VCE = 5.0 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 0.5 Adc, IB = 0.05 Adc
Base-Emitter Voltage
IC = 1.0 Adc, VCE = 10 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.25 Vdc, IC = 4.0 Adc
Test 2
VCE = 20 Vdc, IC = 1.25 Adc
Test 3
VCE = 50 Vdc, IC = 150 mAdc
2N3766
VCE = 65 Vdc, IC = 150 mAdc
2N3767
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(on)
hfe
Cobo
ton
toff
Min. Max. Unit
30
40 160
20
2.5
1.0
Vdc
1.5 Vdc
1.0 8.0
50
pF
0.25 µs
2.5 µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N3767
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 3 Pages
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