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  Microsemi Electronic Components Datasheet  

2N3866 Datasheet

RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS

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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
800 MHz Current-Gain Bandwidth Product
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation
Derate above 25ºC
Value
30
55
3.5
400
5.0
28.6
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.


  Microsemi Electronic Components Datasheet  

2N3866 Datasheet

RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS

No Preview Available !

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCER
BVCEO
BVCBO
BVEBO
ICEO
ICEX
(on)
HFE
VCE(sat)
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
2N3866 / 2N3866A
Value
Min.
Typ.
Max.
Unit
55
-
-
Vdc
30
-
-
Vdc
55
-
-
Vdc
3.5
-
-
Vdc
-
-
20
µA
-
-
100
µA
5.0
-
-
-
10
-
200
-
25
-
200
-
-
-
1.0
Vdc
DYNAMIC
Symbol
Test Conditions
fT
COB
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2N3866
2N3866A
Min.
500
800
-
Value
Typ.
800
-
2.8
Max.
-
-
3.5
Unit
MHz
pF
Rev B January 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.


Part Number 2N3866
Description RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS
Maker Microsemi Corporation
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2N3866 Datasheet PDF






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