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  Microsemi Electronic Components Datasheet  

2N5031 Datasheet

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Silicon NPN, To-72 packaged VHF/UHF Transistor
1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
2N5031
2
13
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Value
10
15
3.0
20
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1303.PDF 10-25-99


  Microsemi Electronic Components Datasheet  

2N5031 Datasheet

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

No Preview Available !

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 0.01 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 0.01mAdc, IC = 0)
Collector Cutoff Current
(VCE = 6.0 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc)
DYNAMIC
Symbol
Test Conditions
fT
CCB
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
Output Capacitance
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
2N5031
Min.
10
15
3.0
-
Value
Typ.
-
-
-
1.0
Max.
-
-
-
10
Unit
Vdc
Vdc
Vdc
nA
25 - 300
-
Min.
1200
-
Value
Typ.
-
2.5
Max.
2500
-
Unit
MHz
dB
MSC1303.PDF 10-25-99


Part Number 2N5031
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Maker Microsemi Corporation
Total Page 4 Pages
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