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  Microsemi Electronic Components Datasheet  

2N6051 Datasheet

PNP DARLINGTON POWER SILICON TRANSISTOR

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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501
Devices
2N6051
2N6052
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation(1)
@ TC = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly at 1.0 W/0C above TC > +250C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
Symbol
RθJC
2N6051 2N6052
80 100
80 100
5.0
0.2
12
150
75
-55 to +175
Max.
1.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6051
2N6052
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 40 Vdc
2N6051
ICEO
VCE = 50 Vdc
Collector-Emitter Cutoff Current
2N6052
VCE = 80 Vdc, VBE = 1.5 Vdc
2N6051
ICEX
VCE = 100 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6052
VEB = 5.0 Vdc
IEBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
80 Vdc
100
1.0 mAdc
1.0
0.5 mAdc
0.5
2.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6051 Datasheet

PNP DARLINGTON POWER SILICON TRANSISTOR

No Preview Available !

2N6051, 2N6052 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 3.0 Vdc
IC = 6.0 Adc, VCE = 3.0 Vdc
IC = 12 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
IC = 6.0 Adc, IB = 24 mAdc
Base-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
Base-Emitter Voltage
IC = 6.0 Adc, VCE = 3.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc; IB = 20 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = IB2 = 20 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C + 100C -00, 1 Cycle, t 1.0 s
Test 1
VCE = 12.5 Vdc, IC = 12 Adc
Test 2
All Types
VCE = 30 Vdc, IC = 5.0 Adc
Test 3
All Types
VCE = 70 Vdc, IC = 200 mAdc
2N6051
VCE = 90 Vdc, IC = 155 mAdc
2N6052
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
VBE
hfe
hfe
Cobo
ton
toff
Min. Max. Unit
1,000
1,000
150
18,000
3.0
2.0
4.0
2.8
Vdc
Vdc
Vdc
10 250
1,000
300
pF
2.0 µs
10 µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6051
Description PNP DARLINGTON POWER SILICON TRANSISTOR
Maker Microsemi Corporation
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2N6051 Datasheet PDF





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