Datasheet4U Logo Datasheet4U.com

2N6338 - NPN POWER SILICON TRANSISTOR

📥 Download Datasheet

Datasheet preview – 2N6338

Datasheet Details

Part number 2N6338
Manufacturer Microsemi Corporation
File Size 75.64 KB
Description NPN POWER SILICON TRANSISTOR
Datasheet download datasheet 2N6338 Datasheet
Additional preview pages of the 2N6338 datasheet.

📁 Similar Datasheet

  • 2N6338 - NPN High Power Silicon Transistor (VPT)
  • 2N6338 - Silicon NPN Transistor (NTE)
  • 2N6338 - NPN Transistor (Motorola)
  • 2N6338 - Silicon NPN Power Transistors (SavantIC)
  • 2N6338 - High-Power NPN Silicon Transistors (ON Semiconductor)
  • 2N6330 - (2N6329 - 2N6331) PNP SIlicon Power Transistor (Magna)
  • 2N6330 - Silicon PNP Power Transistor (INCHANGE)
  • 2N6331 - (2N6329 - 2N6331) PNP SIlicon Power Transistor (Magna)
  • 2N6331 - Silicon PNP Power Transistor (INCHANGE)
  • 2N6339 - NPN Transistor (Motorola)
Other Datasheets by Microsemi Corporation
  • 2N6303 - Silicon PNP Power Transistors
  • 2N6304 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • 2N6306 - NPN POWER SILICON TRANSISTOR
  • 2N6308 - NPN POWER SILICON TRANSISTOR
  • 2N6341 - NPN POWER SILICON TRANSISTOR
  • 2N6350 - NPN DARLINGTON POWER SILICON TRANSISTOR
  • 2N6351 - NPN DARLINGTON POWER SILICON TRANSISTOR
  • 2N6352 - NPN DARLINGTON POWER SILICON TRANSISTOR

Full PDF Text Transcription

Click to expand full text
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509 Devices 2N6338 2N6341 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol 2N6338 100 120 2N6341 150 180 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25 200 112 -65 to +175 Max. 0.875 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case RθJC 0 0 Derate linearly 1.
Published: |