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  Microsemi Electronic Components Datasheet  

2N6353 Datasheet

NPN DARLINGTON POWER SILICON TRANSISTOR

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2N6352 and 2N6353
Available on
commercial
versions
NPN Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/472
DESCRIPTION
This high speed NPN transistor is military qualified up to the JANTXV level.
Qualified Levels:
JAN, JANTX, and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N6352 and 2N6353
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/472
(See part nomenclature for all available options)
RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
Military and other high reliability applications
High frequency response
TO-213AA case with isolated terminals
TO-213AA
(TO-66) Package
MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
2N6352
2N6353
2N6352
2N6353
Total Power Dissipation
Base Current
Collector Current
@ TA = +25 oC (1)
@ TC = +100 oC (2)
Notes: 1. Derate linearly 11.4 mW/oC for T A > +25 oC
2. Derate linearly 250 mW/oC for T C > +100 oC
3. Applies for tp ≤ 10 ms, duty cycle ≤ 50 percent
Symbol
TJ and TSTG
R ӨJC
V CEO
V CBO
V EBO1
V EBO2
PT
IB
IC
Value
-65 to +200
4.0
80
150
80
150
12
6.0
2.0
25
0.5
5
Unit
oC
oC/W
V
V
V
W
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 1 of 7


  Microsemi Electronic Components Datasheet  

2N6353 Datasheet

NPN DARLINGTON POWER SILICON TRANSISTOR

No Preview Available !

2N6352 and 2N6353
MECHANICAL and PACKAGING
CASE: Industry standard TO-213AA (3-pin TO-66), hermetically sealed
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating (on commercial grade only).
Solderable per MIL-STD-750 method 2026.
POLARITY: NPN (see schematic)
MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 6 grams
See package dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N6352 (e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Symbol
IB
IC
IE
TC
V CB
V CBO
V CC
V CE
V CEO
V EB
V EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 2 of 7


Part Number 2N6353
Description NPN DARLINGTON POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 7 Pages
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