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APT28GA60BD15 - High Speed PT IGBT

Download the APT28GA60BD15 datasheet PDF. This datasheet also covers the APT28GA60SD15 variant, as both devices belong to the same high speed pt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fast switching with low EMI.
  • Very Low Eoff for maximum efficiency.
  • Ultra low Cres for improved noise immunity.
  • Low conduction loss.
  • Low gate charge.
  • Increased intrinsic gate resistance for low EMI.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT28GA60SD15_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
APT28GA60K High Speed PT IGBT
APT28GA60SD15 High Speed PT IGBT
APT28F60B N-Channel FREDFET
APT28F60S N-Channel FREDFET
APT28M120B2 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short www.DataSheet4U.net G C E delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.