APT28GA60BD15, APT28GA60SD15 Datasheet - Microsemi Corporation

APT28GA60BD15 High Speed PT IGBT

APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short www.DataSheet4U.net G C E delay times and simple gate drive. The intrins.

APT28GA60BD15 Features

* Fast switching with low EMI

* Very Low Eoff for maximum efﬁciency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS

APT28GA60SD15_MicrosemiCorporation.pdf