
	Microsemi Electronic Components Datasheet

MSAEZ33N20A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

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Features

• Ultrafast rectifier in parallel with the body diode (MSAE type only)

• Rugged polysilicon gate cell structure

• Increased Unclamped Inductive Switching (UIS) capability

• Hermetically sealed, surface mount power package

• Low package inductance

• Very low thermal resistance

• Reverse polarity available upon request

MSAEZ33N20A

MSAFZ33N20A

200 Volts

33 Amps

70 mΩ

N-CHANNEL

ENHANCEMENT MODE

POWER MOSFET

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL

MAX.

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

@ TJ ≥ 25°C

Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ

Continuous Gate-to-Source Voltage

Transient Gate-to-Source Voltage

Continuous Drain Current

Tj= 25°C

Tj=

100°C

Peak Drain Current, pulse width limited by TJmax

Repetitive Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Voltage Rate of Change of the Recovery Diode

@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C

Power Dissipation

Junction Temperature Range

Storage Temperature Range

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

Thermal Resistance, Junction to Case

Mechanical Outline

BVDSS

BVDGR

VGS

VGSM

ID25

ID100

IDM

IAR

EAR

EAS

dv/dt

Tstg

ISM

θJC

200

+/-20

+/-30

132

790

TBD

300

-55 to +150

132

0.4

DRAIN

UNIT

Volts

Amps

V/ns

Watts

°C

Amps

°C/W

GATE

Datasheet# MSC0300A

SOURCE


	Microsemi Electronic Components Datasheet

MSAEZ33N20A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

MSAEZ33N20A

MSAFZ33N20A

www.DataSheet4U.com

Electrical Parameters @ 25°C (unless otherwise specified)

DESCRIPTION

Drain-to-Source Breakdown Voltage

(Gate Shorted to Source)

Temperature Coefficient of the Drain-to-Source

Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Current

Drain-to-Source Leakage Current (Zero Gate

Voltage Drain Current)

Static Drain-to-Source On-State Resistance (1)

Forward Transconductance (1)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

Body Diode Forward Voltage (1)

Reverse Recovery Time (Body Diode)

Reverse Recovery Charge

SYMBOL

BVDSS

∆BVDSS/∆TJ

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Ciss

Coss

Crss

Td(on)

td(off)

Qg(on)

Qgs

Qgd

VSD

trr

Qrr

CONDITIONS

VGS = 0 V, ID = 250 µA

VDS = VGS, ID = 1 mA

VGS = ± 20VDC, VDS = 0 TJ = 25°C

T J = 125°C

VDS =0.8•BVDSS

TJ = 25°C

VGS = 0 V

T J = 125°C

VGS= 10V, ID= 21A T J = 25°C

I D= 33A T J = 25°C

I D= 21A T J = 125°C

VDS ≥ 15 V; ID = 21 A

VGS = 0 V, VDS = 25 V, f = 1 MHz

VGS = 10 V, V DS = 30 V,

ID = 3 A, R G = 50 Ω

VGS = 10 V, V DS = 160V, I D = 50A

IF = IS, VGS = 0 V

IF = 10 A,

-di/dt = 100 A/ µs,

IF = 10 A,

di/dt = 100 A/ µs,

MSAE

MSAF

MSAE

MSAF

MSAE

MSAF

MIN TYP.

200

TBD

2.0 3.0

0.06

TBD

0.11

15 23

2600

500

230

110

450

160

120

1.3

MAX

4.0

±100

±200

250

0.07

UNIT

V/°C

µA

Ω

3900

750

350

170

680

240

1.2 V

1.6

50 ns

230

tbd µC

1.8

Notes

(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%

(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.

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MSAEZ33N20A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAEZ33N20A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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