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MSAEZ33N20A, MSAFZ33N20A Datasheet - Microsemi Corporation

MSAEZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 33 20 132 33 16 790 TBD 300 -55 to +150 -55 to +150 33 132 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns .

MSAEZ33N20A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAFZ33N20A_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: MSAEZ33N20A, MSAFZ33N20A. Please refer to the document for exact specifications by model.
MSAEZ33N20A Datasheet Preview Page 2

Datasheet Details

Part number:

MSAEZ33N20A, MSAFZ33N20A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.43 KB

Description:

N-channel enhancement mode power mosfet.

Note:

This datasheet PDF includes multiple part numbers: MSAEZ33N20A, MSAFZ33N20A.
Please refer to the document for exact specifications by model.

MSAEZ33N20A Distributor

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MSAEZ33N20A MSAFZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation