MSAFA1N100D Datasheet | Microsemi

DESCRIPTION: - - - N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti - Ni (1 um) - Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq. Switching Ultra Low Leakage Current UIS rated Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix Features : - - - - - - - MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @ T C = 25° C Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 ±20 1 .8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps m J m J °C STATIC ELECTRICAL CHARACTERISTICS: SYMBO L BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25m A) Gate Threshold Voltage (VGS= VDS, ID = 1 m A, TJ = 37° C Gate Threshold Voltage (VGS= VDS, ID = 1 m A, TJ = 25° C Drain - Source On-State Resistance (VGS = 10V, ID = ID1, T J = 25° C) Drain - Source On-State Resistance (VGS = 7V, ID = 5…150 m A, T J= 37° C) Drain - Source On-State Resistance (VGS = 7V, ID = 5…150 m A, T J= 25° C) Drain - Source On-State Resistance (VGS = 7V, ID = 5…150 m A, T J= 60° C) Drain - Source On-State Resistance (VGS = 7V, ID = ID1, T J = 125° C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 25° C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 37° C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 125° C) Gate-Source Leakage Current (VGS = ±20V, VCE =0V) Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37° C Gate-Source Leakage Current (VGS= ±20V VCE =0V),...