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MSAFA1N100D - Fast MOSFET Die

Description

N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.

Ni (1 um) Ag (0.2 um) for soft solder attach Low On-state resi

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2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 www.DataSheet4U.com MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DESCRIPTION: • • • N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq.
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