MSAFA1N100D Description
N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
MSAFA1N100D Key Features
- MAXIMUM RATINGS
- Source Voltage Gate
- Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @ T C
- Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37° C Gate Threshold
- Source On-State Resistance (VGS = 10V, ID = ID1, T J = 25° C) Drain
- Source On-State Resistance (VGS = 7V, ID = 5…150 mA, T J= 37° C) Drain
- Source On-State Resistance (VGS = 7V, ID = 5…150 mA, T J= 25° C) Drain
- Source On-State Resistance (VGS = 7V, ID = 5…150 mA, T J= 60° C) Drain