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MSAFA75N10C - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier.

The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application.

Features

  • Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request W W W . Microsemi . COM.

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Full PDF Text Transcription

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MSAFA75N10C SANTA ANA DIVISION www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW DESCRIPTION New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier. The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application. • • • • • • IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request W W W . Microsemi .
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