MSAFA75N10C Datasheet | Microsemi

DESCRIPTION New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier. The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application. - - - - - - IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. KEY Features Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request W W W . Microsemi . APPLICATIONS/BENEFITS APPLICATIONS/BENEFIT S - DC-DC converters - Motor controls - Uninterruptible Power Supply(UPS) - DC choppers - Synchronous rectification - Inverters MAXIMUM RATINGS @ 25°C (unless otherwise specified) Description Drain-to-Source Voltage (Gate Shorted to Source) Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy (3) Total Power Dissipation @Tc=25°C Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Symbol VDSS VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Max. 100 +/-30 +/-40 75 60 300 75 30 1500 540 -55 to +150 -55 to +150 75 300 0.23 Unit Volts Volts Volts Amps Amps Amps m J m J Watts °C °C Amps Amps °C/W Tj= 25°C Tj= 100°C Tstg IS ISM θJC Copyright  2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax:...