MSAFA1N100P3 Datasheet | Microsemi

Features - - - - - - - - Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads 1 Amp 1000 V N-Channel enhancement mode high density Applications Implantable Cardio Defibrillator Testing and Screening (per lot) - 100% Testing at 25C, DC parameters - Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits) Maximum Ratings SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS TJ, TSTG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25 Continuous Drain Current @ TC = 100 Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 ±20 1 0.8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps m J m J C Static Electrical Characteristics SYMBOL BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS MIN Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25m A) 1000 Gate Threshold Voltage (VGS= VDS, ID = 1 m A, TJ = 37C) Gate Threshold Voltage (VGS= VDS, ID = 1 m A, TJ = 25C) 2 Drain - Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C) Drain - Source On-State Resistance (VGS = 7V, ID = 5…150 m A, TJ= 37C) Drain - Source On-State Resistance (VGS = 7V, ID = 5…150 m A, TJ= 25C) Drain - Source On-State Resistance (VGS = 7V, ID = 5…150 m A, TJ= 60C) Drain - Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C) Gate-Source Leakage Current (VGS = ±20V, VCE =0V) Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C TYP 3.4 3.5 12.5 12.5 11.5 15 23.5 1 MAX UNIT...