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MSAEZ50N10A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the MSAEZ50N10A datasheet PDF. This datasheet also includes the MSAFZ50N10A variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MSAFZ50N10A_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX.

100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Tj= 25°C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0299A MSAEZ50N10A MSAFZ50N10A www.DataSheet4U.com Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS ∆BVDSS/∆TJ VGS(th

Overview

2830 S.

Fairview St.

Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A 100 Volts 50 Amps 35 mΩ N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.

Key Features

  • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified).

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