*
*
*
*
*
*
* MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage.

DESCRIPTION:
*
*
* N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontsid.

*
*
* N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti
  – Ni (1 um)
  .

MSAFA1N100P3

MSAFA75N10C

MSAFR12N50A

MSAFR30N20A

MSAFX10N90A

MSAFX11P50A

MSAFX20N60A

MSAFX24N50A

MSAFX40N30A

MSAFX50N20A

MSAFX75N10A

MSAFX76N07A

MSAFZ33N20A