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MSAFA1N100D - Fast MOSFET Die

General Description

: • • • N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.

Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq.

Switching Ultra Low Leakage Current UIS rated Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix

Overview

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