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* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped.

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNI.

MSAFZ33N20A

MSAFA1N100D

MSAFA1N100P3

MSAFA75N10C

MSAFR12N50A

MSAFR30N20A

MSAFX10N90A

MSAFX11P50A

MSAFX20N60A

MSAFX24N50A

MSAFX40N30A

MSAFX50N20A

MSAFX75N10A