* DIRECT REPLACEMENT FOR INTERSIL 3N170 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) rDS(on) ≤ 200Ω td(on) ≤ 3.0ns Maximum Temperatures Storage Temperature Operating Junction Temperature 3N170 Features: Maximum Power Dissipation C
3N170
Micross
289.81 KB
High speed switch.
3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a Gene.
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