3N170 Datasheet | Specifications & PDF Download

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X0AH X0A4H X0A1H X0A2H X0A3H DATASHEET UF3N170400Z 1700V-400mΩ SiC Normally-on JFET Preliminary, March 2019 Description United Silicon Carbide, Inc

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3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MA

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DATASHEET UJ3N1701K2 1700V-1.1W SiC Normally-on JFET Rev. A, February 2020 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET

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N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high inp

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STW3N170 Datasheet N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH Power MOSFET in a TO-247 package Features 3 2 1 TO-247 D(2, TAB) Order code VDS RD

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DATASHEET UF3N170400B7S Silicon Carbide (SiC) JFET EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm Rev. C, January 2025 Description UnitedSiC o

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STFW3N170 N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFET in a TO-3PF package Datasheet - production data TO-3PF 3 2 1 Figure 1: Interna

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3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a Gene

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LS3N170 N-CHANNEL MOSFET The LS3N170 is an enhancement mode N-Channel Mosfet The LS3N170 is an enhancement mode N-Channel Mosfet designed for use as

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Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm UF3N170400B7S Description onsemi offers the High-Performance G3 SiC

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STW3N170, STWA3N170 N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data

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