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XD1002 - GaAs MMIC Distributed Amplifier

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +10.0 VDC 150 mA +0.3 VDC +18 dBm -65 to +165 OC -55 to MTTF Table 2 MTTF Table 2 (2) Channel temperature affect

Features

  • Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadba.

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Datasheet Details

Part number XD1002
Manufacturer Mimix Broadband
File Size 362.91 KB
Description GaAs MMIC Distributed Amplifier
Datasheet download datasheet XD1002 Datasheet
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Full PDF Text Transcription

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0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect www.DataSheet4U.
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