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XP1000-BD Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

Overview: 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Chip Device.

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Datasheet Details

Part number XP1000-BD
Manufacturer Mimix Broadband
File Size 303.19 KB
Description GaAs MMIC Power Amplifier
Download XP1000-BD Download (PDF)

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 700 mA +0.3 VDC +9.0 dBm -65 to +165 OC -55 to MTTF Table 4 MTTF Table 4 (4) Channel temperature affects a device's MTTF.

It is recommended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K ) Gate Bias Voltage (Vg1,2,3,4) Supply Curre

Key Features

  • High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1000 Mimix Broadband’s two stage 17.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to ac.

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