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XP1013-BD - Power Amplifier

Description

Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformit

Features

  • Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1013-BD Chip Device Layout XP1013-BD General.

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Datasheet Details

Part number XP1013-BD
Manufacturer Mimix Broadband
File Size 462.08 KB
Description Power Amplifier
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Full PDF Text Transcription

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17.0-26.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1013-BD Chip Device Layout XP1013-BD General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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