XP1014 - GaAs MMIC Power Amplifier

Mimix Broadband

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Datasheet Details

Part number: XP1014
Manufacturer: Mimix Broadband
File Size: 191.58 KB
Datasheet: XP1014_MimixBroadband.pdf
Description: GaAs MMIC Power Amplifier

XP1014 Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 510 mA +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return.

Features

XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and.

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GaAs MMIC Power Amplifier Mimix Broadband

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