XP1013-BD Overview
Description
Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 650 mA +0.3 VDC +5.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table1 (1) Channel temperature affects a device's MTTF.
