XP1013-BD Datasheet | Mimix Broadband

Features Excellent Saturated Output Stage petitive RF/DC Bias Pin for Pin Replacement 20.0 d B Small Signal Gain +24.0 d Bm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1013-BD Chip Device Layout General Description Mimix Broadband’s three stage 17.0-26.0 GHz Ga As MMIC power amplifier has a small signal gain of 20.0 d B with a +24.0 d Bm saturated output power.This MMIC uses Mimix Broadband’s Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 650 m A +0.3 VDC +5.0 d Bm -65 to +165 OC -55 to MTTF Table1 MTTF Table1 (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=6.0V, Vg=-0.7V Typical) Units Min. Typ. Max. GHz 17.0 - 26.0 d B - 10.0 d B - 10.0 d B - 20.0 d B - +/-2.0 d B - 50.0 d Bm - +24.0 VDC - +6.0 +8.0 VDC -1.0 -0.7 0.0 m A - 320 480 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband. Page 1 of 7 Characteristic Data and Specifications are subject to change without notice....